Tag Multi-Bridge Channel Field Effect Transistor

Samsung starts production of 3nm GAA chips

Samsung starts production of 3nm GAA chips

The gate-all-around (GAA) transistor design used in Samsung Electronics’ 3-nanometer (nm) manufacturing node, the market leader in semiconductor technology, has begun initial production. Samsung’s GAA technology, Multi-Bridge-Channel FET (MBCFETTM), overcomes the performance restrictions of FinFET by increasing performance by increasing…

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