Micron introduced its UFS 4.0 mobile storage solution and disclosed that it has already sent certification tests to “select global smartphone OEMs and chipset vendors.”
Storage devices with capacities of 256GB, 512GB, and 1TB will be produced using the new technology. It will be some time until the first smartphones with Micron UFS 4.0 storage are available because high-volume production won’t start until the second half of this year.
Built in to this storage is 232-layer TLC flash (triple-level cells, i.e., storing 3 bits per cell). The company claims that its six-plane NAND architecture allows for increased random read throughput. Write bandwidth is 100% higher and receive bandwidth is 75% higher compared to previous generation storage.
The read and write speeds of Micron’s UFS 4.0 storage are up to 4,300 MBps and 4,000 MBps, respectively. Particularly the write rating, which is better than Samsung’s UFS 4.0.
The new UFS 4.0 chips also offer 10% lower write latency and a 25% increase in power efficiency.
The solution using UFS 4.0
- provides twice as much performance as prior generations, up to 4300 MBps sequential read and 4000 MBps sequential write, allowing users to access their preferred social media programs more quickly.
- allows consumers to enjoy data-intensive apps longer without having to worry about frequent recharges because it is 25% more power-efficient.
- gives a 10% write latency increase over the competition, making apps operate incredibly well.
- Two hours of 4K streaming content may be downloaded in less than 15 seconds, which is twice as quickly as the previous generation.
A few international semiconductor makers and smartphone manufacturers are receiving the UFS 4.0 storage solution. The most recent mobile flash storage from Micron outperforms rivals on several important NAND benchmarks, providing the fastest performance for flagship smartphones with quick app launches, quick bootups, and quick video downloads.
