4nm process to be used to Qualcomm Snapdragon 5100 series chipsets

Qualcomm has begun using the 4nm technology for its flagship Snapdragon 8 Gen 1 chipset, and the firm is now planning to use it for future processors for wearable devices.

4nm process to be used to Qualcomm Snapdragon 5100 series chipsets

The forthcoming Qualcomm Snapdragon Wear 5100 and Snapdragon Wear 5100+ CPUs are projected to be fabricated on a 4nm production node, resulting in improved performance over current-generation chips.

For those who don’t know, the current-generation Qualcomm Snapdragon Wear 4100 processor is made on a 12nm production node, whereas the Snapdragon Wear 3100 was made on a 28nm process node.

According to reports, Samsung Foundry will produce these new chips, but they will be utilised by other smartphone makers as well and will not be confined to Samsung smartphones.

It’s worth noting that Samsung is also using the new 4nm production node to create the Qualcomm Snapdragon 8 Gen 1 processor. If rumours are to be accepted, the packaging is the only variation between Wear 5100 and 5100+. The Snapdragon Wear 5100’s SoC and Power Management Integrated Circuits will be separated (PMIC).

The Snapdragon Wear 5100+, on the other hand, will feature a Molded Embedded Package (MEP), which means everything will be bundled together. It’s also supposed to contain ARM-developed technologies for heart rate and fall detection, as well as better haptics. Both variations are believed to include four Cortex-A53 cores clocked at 1.7GHz, as well as the Adreno 702 graphics processor clocked at 700MHz. They’ll be able to handle up to 4GB of LPDDR4X RAM and eMMC 5.1 storage.

To get real-time news alerts join the Technewsrooms Telegram group. You can also follow us on Twitter and subscribe to our Google News feed for updates.

New York, NY, USA
See also  WIPO patents Samsung rollable or sliding display phone with S Pen support
Leave a Comment


No comments yet. Why don’t you start the discussion?

    Leave a Reply

    Your email address will not be published. Required fields are marked *