A new DDR5 DRAM 14nm EUV technology is being mass produced by Samsung.

This industry-leading five-layer EUV process gives Samsung the highest bit density DRAM on the market, resulting in a 20 percent improvement in productivity over the latest DDR5 standard. Using Samsung’s 14nm DRAM, AI workloads and 5G workloads can be handled efficiently.

AVvXsEj7RDqHoWRk30UGa3Wk5oPmrlKTKsZpJy7W0Yj09sMa6hg1BdyI2Y1VOthc2Ld8kG9LlJjxu m51nooEdYy6GULcEae8gKupNP7eUd9pFkDzWBfdlpIdbyQcg8TwlhdMhM7ZlWqI3ywdDy1H3Rhxl g6rP3kwtPYcchEwAo0uDpZOs3M0trKWAeu7rNmA=w640 h452 -

The world’s leading memory company, Samsung Electronics, today announced the advent of its ultra-thin, nanoscale 14 nanometer (nm) high-speed DRAM, manufactured with EUV technology. The industry’s first EUV DRAM was delivered last March by Samsung, and Samsung has now increased layer counts to five so that its products are built with the most robust and advanced DRAM processes available today DDR5. Senior Vice President and Head of DRAM Products and Technologies at Samsung Electronics.

Today, Samsung is taking a new technological step forward with the multilayer UVV which has enabled extreme miniaturization at 14nm, a feat not possible with the conventional argon fluoride (ArF) process.  this advancement we will continue to provide more differentiated memory solutions by fully addressing the need for better, more capable cities in the data-driven world of 5G, artificial intelligence and metaverse. As DRAM continues to expand the 10nm range , EUV technology is becoming more and more important to improve the accuracy of models for higher performance and yields. 

With five EUV layers at its 14nm DRAM, Samsung has achieved the highest bit density while improving overall productivity wafers by about 20% The 14nm process can help reduce power consumption by up to 20% compared to the previous generation DRAM node.

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Taking advantage of the latest DDR5 standard, Samsung’s 14nm DRAM will help unlock unprecedented speeds of up to 7.2 gigabits per second (Gbps), more than double the DDR4 speed of up to 3 , 2 Gbit / s. Samsung plans to expand its 14nm DDR5 portfolio to support enterprise data center, supercomputer and server applications. Additionally, Samsung plans to increase the density of its DRAM chip from 14nm to 24GB to better meet the rapidly growing data demands of global computer systems.

See also  The EUV: breakthrough in memory technology

Press Release

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